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| savantic semiconductor product specification silicon npn power transistors 2N6302 description with to-3 package low collector saturation voltage high dc current gain @i c =8a applications designed for use in high power audio amplifier applications and high voltage switching regulator circuits pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 140 v v ceo collector-emitter voltage open base 140 v v ebo emitter-base voltage open collector 7 v i c collector current 16 a i cm collector current-peak 20 a i b base current 5 a p t total power dissipation t c =25 150 w t j junction temperature 150 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 0.875 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2N6302 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a ; i b =0 140 v v cesat-1 collector-emitter saturation voltage i c =10a; i b =1a 1.0 v v cesat-2 collector-emitter saturation voltage i c =16a; i b =4a 2.0 v v besat base-emitter saturation voltage i c =10a; i b =1a 1.8 v v be base-emitter on voltage i c =8a ; v ce =4v 1.5 v i cev collector cut-off current v ce =140v; v be =-1.5v t c =150 1.0 5.0 ma i cbo collector cut-off current v cb =140v; i e =0 1.0 ma i ceo collector cut-off current v ce =70v; i b =0 2.0 ma i ebo emitter cut-off current v eb =7v; i c =0 1.0 ma h fe-1 dc current gain i c =8a ; v ce =4v 15 60 h fe -2 dc current gain i c =16a ; v ce =4v 4 f t transition frequency i c =1a ; v ce =10v;f=1mhz 0.2 mhz savantic semiconductor product specification 3 silicon npn power transistors 2N6302 package outline fig.2 outline dimensions |
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